BD9015KV M ,BD9016KV M : Power Management

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1 Datashee t Switching Regulator with external FET 3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller BD9016KV-M BD9015KV-M Key Specifications General Description high perfor- The BD9015KV-M and BD9016KV-M are  Input voltage range: 3.9 V to 30 V mance synchronous rectificat  Output voltage range: 0.8 V to 10 V ion switching controllers Accurate voltage reference:±1.5%(-40°C to +105°C)  with wide input range and dual channel output. Switching frequency: The synchronous rectification method comes with high  250 kHz to 550 kHz Shutdown current: 0 μ A (Typ) efficiency making controller ideal for eco-designs(low  power consumption) of numerous electronics. Operating temperature r  ange: -40°C to + 105 °C All channels have enable pins, soft start functionality and power good outputs. Startup and shutdown can be Package W (Typ) x D (Typ) x H (Max) controlled independently. VQFP48C 9.00 mm x 9.00 mm x 1.60 mm An integrated PLL circuit can be synchronized to an external 250kHz to 600kHz clock signal. Features ■ N channel MOSFET direct drive Synchronous rectification for increased efficiency ■ Acceptable Low ESR ceramic capacitor at output ■ Integrated PLL circuit for external synchronization; ■ 250kHz to 600kHz Current mode control ■ High side MOSFET current sensing ■ ■ Pre-bias functionality VQFP48C ■ Independent ON/OFF control for all channels At Max Duty the oscillation frequency is slowed down ■ to 1/5, reducing the input/ output voltage difference. Applications ■ Low voltage and over voltage detection circuit at all ■ Car audio, Car navigation outputs LCDTV, PDPTV, DVD, PC, etc.. ■ ted, the L-side FET is When the over voltage is detec OFF (BD9015KV-M). The L-side FET is ON (BD9016KV-M). Low side FET is ON (BD9016KV-M) Power good indicator pin (PGOOD) ■ Integrated overcurrent protection with self recovery. ■ AEC-Q100 Qualified ■ Typical Application Circuit 5V/4A BD9015KV/ BD9016KV Figure 1. Typical Application Circuit : This product is not designed for pr otection against radioactive rays ○ ○ Product structure Silicon monolithic integrated circuit www.rohm.com TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 1/27 14 ・ TSZ22111 001 ・ 10.DEC.2013 Rev.002

2 Datasheet s h e e t a D a t BD9015KV-M BD9016KV-M Pin Configuration (TOP VIEW) Figure 2. Pin Configuration Pin Description Function Symbol Function Pin No. Symbol Pin No. 25 BOOT2 Power supply for OUTH2 driver PGOOD1 Power good output pin 1 1 N.C. N.C. 2 26 Not connected Not connected Output 1 ON / OFF pin EN1 27 Current detection setting pin 2 CL2 3 Output 2 ON / OFF pin 28 EN2 4 N.C. Not connected Not connected 29 N.C. VCCCL2 Power supply for current detection 2 5 Not connected 6 N.C. 30 GND Ground pin Not connected 7 VCC Power supply pin 31 N.C. Not connected 8 VCCCL1 Power supply for current detection 1 32 N.C. Oscillation frequency setting / filter 9 N.C. Not connected 33 RT/LPFC connection pin External synchronization select pin Current detection setting pin 1 SEL 10 CL1 34 Not connected N.C. SYNC External synchronization pulse input pin 35 11 Power good output pin 2 12 36 PGOOD2 BOOT1 Power supply for OUTH1 driver Not connected N.C. OUTH1 High side FET gate pin 1 13 37 High side FET source pin 1 14 SW1 38 SS2 Soft start time setting pin 2 COMP2 Error amp output 2 39 DGND1 Low side FET source pin 1 15 OUTL1 Low side FET gate pin 1 16 FB2 Error amp input 2 40 VREG5A REG input for FET driver pin Not connected N.C. 17 41 EXTVCC External power supply input pin 42 Not connected N.C. 18 Not connected 43 N.C. Not connected 19 N.C. 44 VREG5 R EG output for FET driver pin 20 N.C. Not connected 45 Error amp input 1 FB1 21 OUTL2 Low side FET gate pin 2 22 46 DGND2 Low side FET source pin 2 COMP1 Error amp output 1 23 SS1 Soft start time setting pin 1 High side FET source pin 2 47 SW2 Not connected 48 24 N.C. OUTH2 High side FET gate pin 2 www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 2/27 001 TSZ22111 ・ 15 ・ 10.DEC.2013 Rev.002

3 D Datasheet t a s h e e t a BD9015KV-M BD9016KV-M Block Diagram 34 7 35 42 33 SYNC Reg EN 44 VREG5 BG PLL UVLO TSD OSC 5 8 VCCCL2 VCCCL1 OCP2 OCP1 10 3 CL2 CL1 1 12 BOOT2 BOOT1 Set Set 48 13 OUTH1 OUTH2 DRV DRV Reset Reset 47 14 SW2 SW1 SW SW EN2 EN2 1 VREG5 LOGIC LOGIC 17 VREG5A TSD TSD UVLO UVLO 16 45 OUTL2 OUTL1 SLOPE SLOPE PROTECT PROTECT LOGIC LOGIC 46 15 DGND2 DGND1 PWM PWM Err Amp Err Amp COMP COMP FB1 FB2 21 40 SS2 SS1 23 38 CLAMP CLAMP SCP COMP2 22 COMP1 39 TSD Q Q UVLO Set Set Reset Reset SCP2 OCP2 SCP1 OCP1 OCP1 OCP2 30 25 28 27 36 Figure 3. Block Diagram www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 3/27 001 TSZ22111 ・ 15 ・ 10.DEC.2013 Rev.002

4 Datasheet a s h e e t D t a BD9015KV-M BD9016KV-M Description of Blocks Error amplifier (1) he 0.8V reference voltage and provides the comparison result The error amplifier compares the output feedback voltage to t as COMP voltage, which is used to determine the switching dut y cycle. As at startup the so ft start is based on the SS pin voltage, the COMP voltage is limited to the SS voltage. (2) Oscillator An internal fixed current source sets the oscillation frequency with the help of a single resistor connected to the RT pin. The frequency can be set in the range between 250 kHz to 550 kHz by proper selection of the external resistor. The phase the input capacitor voltage ripple and power losses. difference between the outputs is 180° to help reduce oscillation frequency is divided 5times from the set value. Thi s Also, in case the input/output voltage difference is small, the increase the maximum duty cycle time and helps to reduce the input to output voltage drop. The maximum Duty is determined by the following equation. T : OUTH Minimum OFF time (Max=400ns) OFF ) / 5 ) × 100 Maximum Duty = ( 1 – ( T [%] × f OSC OFF Setting frequency f OSC: influenced by PCB layout, FET, inductor, etc. Verification Also above equation is theory value. The maximum duty may be and confirmation with the actual application is recommended. (3) Slope generate a saw-tooth wave and sends this wave to the PWM The slope block uses the clock produced by the oscillator to comparator. (4) PWM COMP comparing the error amplifier COMP voltage, with the The PWM comparator determines the switching duty cycle by The switching duty cycle is limited internally to a fixed maximum duty, and thus saw-tooth signal from the slope block. cannot become 100 %. (5)Driver(DRV, SW LOGIC) This block receives the switching Duty determined by th e PWM COMP block and generates OUTH and OUTL signals which drive the external FETs. Also, the minimum ON time of OUTH is designed 250ns at the minimum and the minimum OFF time is designed 400ns at the maximum. Reference voltage (VREG5) (6) This block generates the internal reference voltage: 5 V. VREG5 requires an external capacitor. The FET driver supply input (VREG5A) also requires a capacitor. A ceramic capacitor with a value of 2 μ F or more with low ESR matching the VREG5 and VREG5A pin is recommended. (7) External synchronization (SYNC, PLL) The internal oscillator circuit can be synchronized with an external signal applied to the SYNC pin. This is done with the help of an internal PLL circuit. In this situation the SEL pin must pulled “H”. After applying a clock to the SYNC pin and pulling the SEL pin “H”, the internal frequency will synchronize with the applied clock frequency. For synchronization, a clock with a frequency of 250 kHz to 600 kHz and duty of 20 % to 80 % must be used. Note, the SEL pin should be set to H before the EN pin or it should be set to H after the soft start time. w pass filter is required for the LPF / RT pin. In case of using external synchronization, a lo (8) PGOOD pin the nominal output volt This pin monitors the output vo age, PGOOD output is ltage (FB voltage). If it is within 8.5 % (typ) of “H”. When outside the ra nge of 8.5% the PGOOD output is pulled “L”. a pull up resistor is required when used. The PGOOD pin is an open drain output so (9) Overcurrent protection (OCP) The overcurrent protection is activated when the V CCCL to CL voltage drop reaches or exceeds 90mV. Once activated the OUTH duty will be limited and the output voltage lowered. (SCP) (10) Short circuit protection The short circuit protection is activated after the output voltage (FB voltage) drops below 91.5 % and the overcurrent ercurrent protection is activat ed in a situation where the FB protection is detected 256 times (all SW pulses). Also, if the ov put short and the short circuit protection will be activated. voltage is equal or less than 0.5 V, this will resemble an out 1024 cycles of oscillation frequency, the output will be turned o ff If the short circuit protection is activated, for a period of and the SS and COMP discharged. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 4/27 TSZ22111 ・ 15 001 ・ 10.DEC.2013 Rev.002

5 e Datasheet t a s h e a t D BD9015KV-M BD9016KV-M (OVP) Overvoltage protection (11) s above 108.5 %, OUTH and OUTL will turn off. BD9015KV-M, If the output voltage (FB voltage) rise light load or if recovery takes time, the chip will recover. However, in case of Once the output returns to a normal state the COMP voltage will drop and recovery will be done with the mini to undershoot of the output. mum duty cycle, which may lead In case this undershoot becomes an application proble m, the output capacitor should be increased or the phase compensation RC constant should be adjusted. BD9016KV-M, If the output voltage (FB volta ge) rises above 108.5 %, only OUTH will turn off. OUTL continues to turn on and L-side FET will discharge the output capacitance. The ON pul se width of OUTL is determined by PWM COMP. If a short e described in the “Operational Notes” at page 24. to VCC is considered the countermeasures needed ar (12) Under voltage lockout circuit (UVLO) LO is activated and the device will shut down. If the VREG5 voltage drops below 3.6 V (typ) the UV (13) Thermal shutdown (TSD) If the chip temperature (Tj) reaches or exceeds ca. 150 °C the output is turned off. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 5/27 001 ・ 15 ・ TSZ22111 10.DEC.2013 Rev.002

6 Datasheet a a s h e e t D t BD9015KV-M BD9016KV-M Absolute Maximum Ratings Parameter Symbol Limits Unit (1) VCC V VCC Voltage -0.3 to +35 (1) EXTVCC Voltage EXTVCC V -0.3 to +35 (1) VCCCL1, 2 V VCCCL1, 2 Voltage -0.3 to +35 V V CL1, 2 Voltage -0.3 to VCCCL1,2 CL1, 2 V V SW1, 2 Voltage -1.5 to VCCCL1,2 SW1, 2 V V BOOT1, 2 Voltage -0.3 to +40 BOOT1, 2 V V BOOT1, 2 - SW1, 2 Voltage -0.3 to +7 BOOT1, 2-SW1, 2 VREG5, 5A V VREG5, 5A Voltage -0.3 to +7 or EXTVCC V V -0.3 to EXTVCC EN1, 2 Voltage EN1, 2 V V -0.3 to VREG5 SS1, 2 Voltage SS1, 2 V V FB1, 2 Voltage -0.3 to VREG5 FB1, 2 V V COMP1,2 Voltage -0.3 to VREG5 COMP1, 2 V V -0.3 to VREG5 RT/LPFC Voltage RT / LPFC V V -0.3 to +7 PGOOD1,2 Voltage PGOOD1, 2 V V SEL Voltage -0.3 to +7 SEL V V SYNC Voltage -0.3 to +7 SYNC (2) Pd W 1.1 Power Dissipation °C Topr -40 to +105 Operating Temperature Range Ts t g °C Storage Temperature Range -55 to +150 Tjmax °C +150 Junction Temperature (1) Pd should not be exceeded. (2) 25 °C if mounted on a glass epoxy board of 70 mm × 70 mm × 1.6 mm ≥ 8.8 mW / °C reduction when Ta (Ta=25 °C ) Recommended Operating Ratings Parameter Symbol Limits Unit (1) V 3.9 to 30 Supply Voltage 1 VCC, EXTVCC V 3 to VCC VCCCL1, 2, V Supply Voltage 2 CL1, 2 3.2 to VREG5 V SW1,2 Voltage - BOOT1,2 V BOOT1, 2 - SW1, 2 Output Voltage 0.8 to 10 V V O Oscillation Frequency Range 250 to 550 kHz f OSC 250 to 600 kHz Synchronous Frequency Range f SYNC_IN In case of using less than 6V, short VCC, EXTVCC and VREG5. (1) Note, this is the minimum value after 4.5V or higher has been supplied to the supply pin. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 6/27 ・ 15 001 ・ TSZ22111 10.DEC.2013 Rev.002

7 Datasheet t s h e e t a D a BD9015KV-M BD9016KV-M Electrical Characteristics =5V) (Unless otherwise specified: Ta=25°C, VCC=12V, EXTVCC=12V, VCCCL1, VCCCL2=12V, V , V EN1 EN2 Limits Parameter Symbol Unit Conditions Min. Typ. Max. Circuit Current I - 4 10 mA CC V = 0 V , V EN1 EN2 A I Shutdown Current - 0 1 μ ST Ta = -40 °C to +105 °C V V 2.70 2.15 1.00 Ta = -40 °C to +105 °C EN Pin Threshold Voltage ENTH = 5 V EN Pin Pull Down Resistor 100 200 400 k Ω V R , V EN2 EN1 EN VREG5 VREG5 Output Voltage VREG5 4.7 5.0 5.3 V I = 6 mA VREG5 UVLO VREG5 SWEEP DOWN 3.3 3.6 3.9 V UVLO Operating Voltage V UVLO Ta = -40 °C to 105 °C V 200 400 600 mV VREG5 SWEEP UP Hysteresis Voltage UVLO_HYS Error Amp Block V , V = 0.8 V FB1 FB2 μ A I FB Pin Source Current 0 0.13 1.00 FB Ta = -40 °C to +105 °C V FB1, FB2 pin voltage V 1 0.792 0.800 0.808 Reference Voltage 1 REF FB1, FB2 pin voltage V 0.812 2 0.788 V Reference Voltage 2 0.800 REF Ta = -40 °C to +105 °C Oscillator Block Oscillation Frequency f RT = 200 k Ω 270 300 330 kHz OSC Ω RT=200 k External Synchronous Frequency = 500 kHz f f - 500 - kHz SYNC SYNC_IN Ta = -40 °C to +105 °C 1.8 2.5 0.5 Ta = -40 °C to +105 °C SYNC Pin Threshold Voltage V V SYNCTH Ω V 125 250 500 k R SYNC Pin Pull Down Resistor = 5 V SYNC SYNC V SEL Pin Threshold Voltage V 0.5 1.8 2.5 Ta = -40 °C to +105 °C SELTH Ω SEL Pin Pull Down Resistor R 125 250 500 k V = 5 V SEL SEL = 1 V A V μ 20 30 40 LPFC Charge Current I LPFCC RT / LPFC μ I LPFC Discharge Current 20 30 40 = 1 V A V LPFCDC RT / LPFC Soft Start Block V , V = 1 V SS1 SS2 SS Pin Charge Current I 5 10 15 μ A SS Ta = -40 °C to +105 °C V = 1 V , V SS2 SS1 Ω 0.3 0.5 1.7 k R SS Pin Discharge Current SS VCC = 3 V 2.05 2.25 2.45 V V Maximum Voltage SS_MAX VCC = 3 V 0 0.01 0.10 V V Standby Voltage SS_STB Ta = -40 °C to +105 °C * This product is not designed to be radiation-resistant. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 7/27 001 TSZ22111 ・ 15 ・ 10.DEC.2013 Rev.002

8 t Datasheet s h e e a t a D BD9015KV-M BD9016KV-M Electrical Characteristics =5V) , V Ta=25°C, VCC=12V, EXTVCC=12V, VCCCL1, VCCCL2=12V, V (Unless otherwise specified: EN2 EN1 Limits Unit Conditions Parameter Symbol Min. Typ. Max. Driver Block OUTH Minimum ON Time T - 130 - ns ON - 200 - ns T OUTH Minimum OFF Time OFF → OUTH OUTL Dead Time - 35 - ns T DETHL → - 35 - ns OUTL T OUTH Dead Time DETLH R OUTH High Side ON Resistor - 2.5 - Ω ON_HH OUTH Low Side ON Resistor Ω - 1.7 - R ON_HL - 2.5 - OUTL High Side ON Resistor R Ω ON_LH Ω - 1.1 - R OUTL Low Side ON Resistor ON_LL V = 17 V BOOT - 1 - mA I BOOT Pin Current Consumption BOOT , V = VCCCL V SW1 SW2 Overcurrent Protection Block CL Pin Threshold Voltage 1 V 78 90 103 mV CL1 105 mV Ta = -40°C to +105°C 90 75 CL Pin Threshold Voltage 2 V CL2 I Ta = -40°C to +105°C A μ CL Pin Sink Current 7 20 40 CL V Output Short Detection Voltage V 0.45 0.50 0.55 FB1, FB2 pin voltage SHORT PGOOD Block V = 0 V , V FB1 FB2 Ω 0.5 1.5 2.5 k PGOOD ON Resistor R PGOOD Ta = -40 °C to +105 °C V = 5 V, PGOOD PGOOD Pin Leakage Current ,V = 0.8 V A I μ - 0 1 V PGOOD FB1 FB2 Ta = -40 °C to +105 °C Output Overvoltage Detection 0.848 FB1, FB2 pin voltage V 0.888 0.868 V OVER Voltage Output Low Voltage Detection V 0.752 V FB1, FB2 pin voltage 0.732 0.712 LOW Voltage * This product is not designed to be radiation-resistant. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 8/27 001 TSZ22111 ・ 15 ・ 10.DEC.2013 Rev.002

9 Datasheet D t a s h e e t a BD9015KV-M BD9016KV-M Typical Performance Curves 10 100 9 90 Upper: 5V output 8 80 Below: 3.3V output 7 70 6 60 5 50 4 40 EFFICIENCY : [%] 3 30 STANDBY CURRENT : Ist[μA] 2 20 VCC = 12 V FOSC = 350 kHz 10 1 Ta = 25°C 0 0 0.00.51.01.52.02.53.03.54.0 0 102030 LOAD CURRENT : [A] INPUT VOLTAGE : VIN[V] Figure 5. Shutdown Current Figure 4. Efficiency 808 10 806 8 804 802 6 800 4 798 796 CIRCUIT CURRENT : LCC[mA] 2 REFERENCE VOLTAGE : VFB[V] 794 0 792 -40-200 20406080100 -40-200 20406080100 AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] Reference Voltage vs. Temperature Figure 7. Figure 6. Circuit Current Characteristics www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 9/27 001 ・ ・ 15 TSZ22111 10.DEC.2013 Rev.002

10 Datasheet D a s h e e t a t BD9015KV-M BD9016KV-M Typical Performance Curves 330 100 RT = 200 k Ω 320 95 310 300 90 290 85 280 OSILATING FREQUENCY : FOSC[kHz] CL THRESHOLD VOLTAGE : Vswth[mV] 270 80 -40 -20 0 20 40 60 80 100 -40-200 20406080100 AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] Figure 8. CL Pin Threshold Voltage vs. Figure 9. Frequency vs. Temperature Characteristics Temperature Characteristics 15 4.3 14 4.2 13 4.1 Return voltage 12 4.0 11 3.9 10 3.8 9 3.7 Operation voltage 8 3.6 CHARGE CURRENT : Iss[μA] 7 3.5 UVLO THRESHOLD VOLTAGE : [V] 6 3.4 5 3.3 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] Figure 11. UVLO Operation/Return Voltage vs. Figure 10. SS Charge Current vs. Temperature Characteristics Temperature Characteristics www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 10/27 TSZ22111 001 15 ・ ・ 10.DEC.2013 Rev.002

11 Datasheet t h e e t D s a a BD9015KV-M BD9016KV-M Typical Performance Curves 0.3 3.0 2.5 0.2 2.0 1.5 0.1 1.0 FB OUTPUT CURRENT : IFB[μA] 0.5 EN THRESHOLD VOLTAGE : VEN[V] 0.0 0.0 -40-200 20406080100 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] Figure 13. FB Pin Source Current vs. Figure 12. EN Threshold Voltage vs. Temperature Characteristics Temperature Characteristics 1.0 3.0 ] Ω 2.5 0.9 Overvoltage detection 2.0 0.8 1.5 Low voltage detection 1.0 0.7 0.5 PGOOD ON RESISTANCE : PGOOD[k OUTPUT OVER/LOW SENSE VOLTAGE : [V] PGOOD ON PRESISTANCE : RPGOOD[kΩ] 0.0 0.6 -40-200 20406080100 -40-200 20406080100 AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] AMBIENT TEMPERATURE : Ta[°C] Figure 15. Output Overvoltage / Low Voltage Figure 14. PGOOD Pin ON Resistance vs. Detection Voltage vs. Temperature Characteristics Temperature Characteristics www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 11/27 ・ 15 ・ 001 TSZ22111 10.DEC.2013 Rev.002

12 e Datasheet a s h e t t D a BD9015KV-M BD9016KV-M Timing Chart otection operations Pr Startup operations VCC EN UVLO off(typ:4.0V) VREG5 SS COMP OUTH OUTL Vo setting voltage×91.5% Vo PGOOD Figure 16. Startup Operations Timing Chart Figure 17. Protection Operations Timing Chart Pre-bias function Figure 18. Pre-bias Functionality Timing Chart www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 12/27 ・ 001 ・ TSZ22111 15 10.DEC.2013 Rev.002

13 Datasheet D a s h e e t a t BD9015KV-M BD9016KV-M Selection of External Components (1)Setting the output L value The coil value significantly influences the output ripple current. As shown in the following equation, the larger the coil, and the higher the switching frequency, the lower I Δ L the ripple current. VCC - V × V ) ( O O [A] = Δ I L L × VCC × f 1/f VCC The optimal output ripple current setting is ca. 30% of the maximum output current. I I max [A] = 0.3×I Δ I O L O L V ( VCC - V ) × V O O O [H] L = L × VCC × f I Δ L C O ) switching frequency : output ripple current, f : Δ ( I L Figure 19. Output Ripple Current cy. It is Outputting a current in excess of the coil current rating will cause magnetic saturation of the coil and will decrease efficien recommended to allow for sufficient margin to ensure that the peak current does not exceed the coil current rating. nimize coil loss and increase efficiency. Use low resistance (DCR, ACR) coils to mi (2)Setting the output capacitor Co value Select the output capacitor with consideration to acceptable ripple voltage (Vpp). The following equation is used to determine the output ripple voltage. V Δ I 1 O L V Δ Δ = × R I + switching frequency : Note. f × [V] × ESR PP L C VCC f O The output Co setting needs to be kept within the allowable ripple voltage range. Allow for a sufficient voltage output margin in etting the establishing the capacitor rating. Low ESR capacitors enable a lower output ripple voltage. Also, to meet the requirement for s output startup time parameter within the soft start time range, take the conditions described in the following capacitance equa tion for output capacitors into consideration. × (I - I ) T : soft start time T SS SS O LIMIT ≤ C O V over current detection limit : I LIMIT O Note: non-optimal capacitance values may cause startup problems. Especially in cases of extremely large capacitance values, the possibility exists that the inrush current at startup will activate the overcurrent protection, thus not starting the output. T herefore, verification and conformation with the actual application is recommended. (3)Setting the input capacitor (C IN) The input capacitor serves to lower the output impedance of the power source connected to the input pin (VCC,VCCCL,EXTVCC). Increased power supply output VCC impedance can cause input voltage (VCC) instability and may negatively impact oscillation and ripple rejection characteristics. Therefore, it is necessary to place an C IN I input capacitor in close proximity to the VCC and GND pins. Select a low ESR O capacitor with the required ripple current capacity and the capability to withstand V O temperature changes without wide tolerance fluctuations. The ripple current I is RMS L C O determined by the following equation. V ) ( VCC - V O O [A] = I × I RMS O VCC Figure 20. Input Capacitor Also, be certain to ascertain the operating temperature, load range and MOSFET conditions for the application in which the capacitor will be used since capacitor ication’s power supply characteristics, performance is heavily dependent on the appl PCB wiring pattern and MOSF ET gate-drain capacity. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 13/27 15 ・ ・ TSZ22111 001 10.DEC.2013 Rev.002

14 e Datasheet a s h e t t a D BD9015KV-M BD9016KV-M ) (4)Setting the output voltage (V O The output voltage is determined by the equation below. Select a combination of R1 and R2 to obtain the required voltage. Note that a small resistor value leads to a drop in power efficiency and that a large resistor value leads to an increase of th e offset voltage due to FB pin source current of 0.13μA (Typ). R1 + R2 = 0.8 × V O R2 Figure 21. Setting the Output Voltage ) (5)Setting the oscillation frequency (f OSC The setting of the internal oscillation frequency is possible by use of the resistor value connecter to RT. The setting range is 250kHz to 550kHz. The correlation between the resistor value and the oscillation frequency is as shown in the table and Figure 22. below. Setting a resistor outside the range shown below may cause the swit ching to stop after witch operation is no longer guaranteed. Note that in case the input/output voltage difference is small, the oscillation frequency is divided by 5, reducing the output voltage drop. The detail behavior is described in the description of Oscillator on page 4. 700 600 RT Resistor Oscillation Frequency 500 180k Ω 250kHz Ω 200k 300kHz 400 220k Ω 350kHz 300 FREQUENCY[kHz] Ω 240k 400kHz 200 270k Ω 480kHz 100 Ω 300k 550kHz 150 200 250 300 350 RT RESITANCE[k ] Ω Figure 22. RT resistor vs. oscillation frequency ) (6)Setting the soft start time (T SS shows the current and output voltage overshoot at startup. The Figure 23. The soft start function is necessary to prevent inrush of coil relation between soft start time and capacitance, which can be calculated by using the equation. 10 1 DELAY TIME[ms] 0.8V(Typ) × C SS [sec] = T SS 0.1 ) ( 10 μ A (Typ) I SS 0.01 0.1 SS CAPACITANCE[μF] Figure 23. Capacitance vs. Soft Start Time Capacitance values between 0.01μF and 0.1μF are recommended. There is a possibility that an overshoot is generated in the output due to the phase compensation, out cation and confirmation with the actual put capacitor, etc. Therefore, verifi application is recommended. Use high accuracy components (X5R ) when implementing sequential startups involving other power sources. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 14/27 ・ 001 ・ 15 TSZ22111 10.DEC.2013 Rev.002

15 a Datasheet a s h e e t t D BD9015KV-M BD9016KV-M (7)Setting the overcurrent detection value (I ) LIMIT ction value t detection value, overcurrent protection is activated. The dete When the peak of the current in the coil exceeds the overcurren : connected between VCCCL and CL and the CL pin threshold voltage (Typ 90mV). It can be calculated is determined by the resistor R CS using the formula below. VCC VCCCL 90mV L I R CS vercurrent O = [A] I LIMIT CL R CS I L V O L C O Figure 24. Setting the Overcurrent Figure 25. The Point of Detecting Detection Value Overcurrent When the overcurrent protection is activated, the output duty is limited to prevent an increase in output current. The overcurr ent protection is an auto-recovery type; when the output load returns to normal state, the output duty and output voltage also return to the n ormal state. The voltage generated by the overcurrent detection resistor provides feedback to the internal SLOPE and is also used in determi ning the switching duty. To prevent sub-harmonic oscillation at time of high duty cycles, the equation below needs to be satisfied. × Duty × R V CS O ≤ 0.09 L × f OSC In case the equation above is not satisfied, revise the constants or settings. (8)Selecting MOSFET FET used Nch MOS > V V ・ > VCC ・ V BOOT-SW DS GSM1 > VREG5 ・ V GSM2 VCC Allowable current > output current + ripple current ・ nt protection value is Value higher than the overcurre ※ V I I DS L O recommended V V GSM1 O Select a low ON resistance MOSFET for high efficiency ※ L V DS C O V GSM2 Note ※ In case the input capacitance of the output FET is extremely large, ficiency decreases due to the the possibility exists that the ef shortening a dead time of the upper and lower output FET. For the T, a value of 1200pF or lower is input capacitance of the output FE Figure 26. Selecting MOSFET recommended. As these characteristics are influenced by the PCB layout and the type of the components verification and application is recommended. confirmation with the actual (9)Selecting Schottky barrier diode > VCC Reverse voltage V ・ VCC R Allowable current > output current + ripple current ・ I I L O Value higher than the over cu ※ rrent protection value is V O recommended. L C O ※ Select a diode with a low forward voltage and fast recovery for V R high efficiency. Figure 27. Selecting Schottky Barrier Diode www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 15/27 ・ 15 ・ TSZ22111 001 10.DEC.2013 Rev.002

16 Datasheet e e t t D a h s a BD9015KV-M BD9016KV-M (10)Setting the phase compensation circuit Negative feed back stability conditions are as follows. or less. (i.e. the phase margin is 45 ̊ ・ At time of unity gain (0dB) the phase delay should be 135 ̊ or higher) 1/10 of less of the switching frequency Also, the crossover frequency (frequency of 0dB) of the whole system is set to because DC/DC converter applications are sampled by the switching frequency. In summary, the characteristics that t he application target is as follows. ̊ At time of unity gain (0dB), the phase delay should be 135 ・ ̊ or less. (i.e. the phase margin is 45 or higher) ・ fc is less than 1/10 of switching frequency The response is determined by the limitat ion of fc. Therefore, the switching frequency is required to high in order to increase the response. The phase compensation is set by the capacitor and resist or which are connected in series to the COMP pin. Achieving stability by using the phase compensation is done by cancelling the fp1 and fp2 (error amp pole and power stage pole) of the regulation loop by use of fz1. fp1, fp2 and fz1 are determined in the following equations. g m fp1 = × C1 × A π 2 V 1 fp2 = × R × C π 2 LOAD O 1 fz1 = 2 π × C1 × R1 Also, by inserting a capacitor in C2, phase lead fz2 can be added. 1 fz2 = Figure 28. Setting Phase Compensation Circuit × C2 × R2 2 π In the for mula above, g is the error amp transconductance (400 μ A/V) and A is the error amp voltage gain (200V/V). V m the actual application may be required. efore, adjustment on This setting is obtained by using a simplified calculation, ther Also as these characteristics are influenc ed by the PCB layout, load conditions, etc. verification and confirmation with the actual application at time of ma ss production design is recommended. (11)Setting the BOOT pin serial resistors (R ) BOOT By connecting resistors to the BOOT pin, it becomes possible to VREG5 adjust the turn on delay and rise time at switching. Placing the I BOOT resistors also allows for the adjustment of the upper and lower FET I BOOT CHARGE dead time and is effective as noise countermeasure at time of R BOOT C switching. BOOT so as not to As shown in Figure 29., place the resistor at R SW BOOT of the capacitor C for the BOOT limit the charge current I BOOT CHARGE is large, the possibility exists pin boost. In case the resistor R BOOT that voltage drop is generated between the BOOT pin voltage Figure 29. Setting the BOOT pin Serial Resistors . to no higher than 10 Ω is no longer guaranteed. Therefore set R BOOT (12)Concerning switching pulse jitter and split There are cases in which, when the switching pulse duty is at ca. 50%, it is influenced by the other switching pulse resulting in jitter or split (small duty and large duty are alternately output) on/off the switching output. If the jitter and split cause a problem take the steps listed below. to pin CL (a) Serially place resister R CL to the lower gate. (b) Place resister R OUTL resister of Generally, the jitter and split are suppressed with R CL 200 Ω to 300 and R Ω resister of 4.7 Ω to 10 Ω . OUTL However, as these characteristics are influenced by the PCB layout, used FET, etc. Verification and confirmation with the actual application is recommended. Figure 30. Measures of Jitter and Split www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 16/27 15 ・ ・ 001 TSZ22111 10.DEC.2013 Rev.002

17 Datasheet t a s h e e t D a BD9015KV-M BD9016KV-M Frequency Characteristic Evaluation The DC/DC converter’s frequency characteristics (phase marg in, gain margin) can be measured by using a gain-phase analyzer or FRA. Confirm that output does not oscillate in a closed loop with maximum 1 . load. . and insert Vm (amplitude of ca. 20mVpp to ② and 2 ① Isolate 100mVpp). . ② to that of ① Measure (probe) the oscillation of . 3 The phase margin can also be measured with the load responsiveness. Maximum Measure the variation in output voltage when instantaneously changing load Output load the load from no load to maximum load. If ringing occurs, the phase 0 margin is insufficient. If no ringing occurs, the phase margin is sufficient. Phase margin is insufficient The actual phase margin can not be measured. Output voltage Phase margin is enough t Figure 31. Measurement of Frequency Characteristic www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 17/27 ・ 15 ・ TSZ22111 001 10.DEC.2013 Rev.002

18 Datasheet D t a s h e e t a BD9015KV-M BD9016KV-M Application circuit example ※ Application circuit is same both BD9015KV-M and BD9016KV-M Parameter Symbol Spec example Input voltage VCC 6V to 28V 1 / I 1 5V / 4A V O O Output voltage/ current 2 3.3V /4A 2 / I V O O Output ripple voltage V Δ 20mVp-p PP 350kHz Switching frequency f OSC -40°C to 105°C Operating temp. range Ta 3 R 4 R 2 R CS CS R 1 CS CS C 1 C 2 C 4 3 C IN IN IN IN C 5 IN D3 D4 R CL2 R CL1 R BOOT2 R BOOT1 C BOOT1 C BOOT2 L1 L2 R R OUTL2 OUTL1 D1 D2 C C 1 4 3 5 C 6 2 C C C O O O O O O M1 M2 BD9015KV/ C1 R1 C3 R4 C C VREG5 VREG5A BD9016KV C 6 IN R6 R3 R2 R5 C4 C C2 C SS2 SS1 C5 RT R R PGOOD1 PGOOD2 R7 ※D1 and D2 are optional. If you use D1 and D2, efficiency increases from 1% to 3%. Figure 32. Reference circuit NF FRA5087 Tektronix MSO5204 Tektronix MSO5204 100 90 80 Phase 70 1 : 2.0A/div @ DC I 60 O Gain 50 40 1 : 300mV/div @ AC V O 30 EFFICIENCY[%] 20 1 : 10mV/div @ AC V O VCC=12V 10 100μs/div 2.0us/div 0 VCC=12V VCC=12V VCC=12V 01234 I I I 1 Step 0A to 4.0A 1=4.0A 1=2.0A OUTPUT CURRENT:Io[A] O O O Figure 36. Load Response Figure 34. Output Ripple Figure 33. Efficiency Figure 35. Frequency V ( 1=5V ) ) 1=5V V voltage ( V ( ) 1=5V O O O ) 1=5V V ( Characteristic O NF FRA5087 Tektronix MSO5204 Tektronix MSO5204 100 90 80 Phase 70 I 2 : 2.0A/div @ DC 60 O Gain 50 40 2 : 200mV/div @ AC V O 30 EFFICIENCY[%] 20 2 : 10mV/div @ AC V O VCC=12V 10 2.0us/div 100μs/div 0 VCC=12V VCC=12V VCC=12V 01234 2=4.0A 2 Step 0A to 4.0A 2=2.0A I I I O O O OUTPUT CURRENT:Io[A] Figure 38. Output Ripple Figure 37. Efficiency Figure 39. Frequency Figure 40. Load Response V ( voltage ) 2=3.3V ( V 2=3.3V ) ) 2=3.3V V ( Characteristic ( V 2=3.3V ) O O O O www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 18/27 001 ・ 15 ・ TSZ22111 10.DEC.2013 Rev.002

19 Datasheet h e e t t D s a a BD9015KV-M BD9016KV-M Type Manufacturer Parameters Part Name(series) No Package 43k Ω ,1%,1/16W MCR01 Series Chip resistor ROHM R1 1005 8.2k ,1%,1/16W Ω Chip resister MCR01 Series ROHM R2 1005 ,1%,1/16W Ω 5.6k MCR01 Series ROHM Chip resistor R3 1005 47k ,1%,1/16W Ω Chip resistor R4 1005 ROHM MCR01 Series Ω 15k ,1%,1/16W Chip resistor MCR01 Series ROHM R5 1005 ,1%,1/16W 3.9k Ω Chip resistor R6 1005 MCR01 Series ROHM 1k Ω ,1%,1/16W Chip resistor MCR01 Series R7 1005 ROHM 220k Ω ,1%,1/16W Chip resistor MCR01 Series RT 1005 ROHM 300 ,1%,1/16W Ω Chip resistor ROHM MCR01 Series R 1005 CL1 Ω ,1%,1/16W 300 Chip resistor ROHM MCR01 Series R 1005 CL2 10 ,1%,1/16W Ω Chip resistor ROHM R 1005 MCR01 Series BOOT1 10 Ω ,1%,1/16W Chip resistor 1005 R MCR01 Series ROHM BOOT2 ,1%,1/16W Ω 4.7 Chip resistor MCR01 Series ROHM 1005 R OUTL1 Ω ,1%,1/16W 4.7 Chip resistor R ROHM 1005 MCR01 Series OUTL2 100k ,1%,1/16W Ω Chip resistor MCR01 Series ROHM R 1005 PGOOD1 Ω ,1%,1/16W 100k Chip resistor R MCR01 Series ROHM 1005 PGOOD2 Ω ,1%,1/3W 20m Chip resistor ROHM UCR10 Series 1 2012 R CS 20m Ω ,1%,1/3W Chip resistor UCR10 Series ROHM 2 2012 R CS 20m Ω ,1%,1/3W Chip resistor ROHM 3 2012 R UCR10 Series CS 20m Ω ,1%,1/3W Chip resistor ROHM R 4 2012 UCR10 Series CS C1 1005 100pF,CH,50V GCM Series Ceramic MURATA 4700pF,R,50V C2 1005 GCM Series Ceramic MURATA 100pF,CH,50V C3 1005 GCM Series Ceramic MURATA 6800pF,R,50V C4 1005 GCM Series Ceramic MURATA 4700pF,R,50V MURATA C5 1005 Ceramic GCM Series 0.1uF,R,16V MURATA Ceramic C GCM Series 1005 SS1 0.1uF,R,16V C 1005 GCM Series Ceramic MURATA SS2 0.1uF,R,16V 1005 C MURATA Ceramic GCM Series BOOT1 0.1uF,R,16V C 1005 GCM Series Ceramic MURATA BOOT2 1uF,X7R,16V MURATA Ceramic C 1608 GCM Series VREG5A 1uF,X7R,16V Ceramic GCM Series MURATA 1608 C VREG5 4.7uF,X7R,50V C 1 3225 Ceramic MURATA GCM Series IN 4.7uF,X7R,50V C Ceramic GCM Series 2 3225 MURATA IN 4.7uF,X7R,50V MURATA C 3 3225 GCM Series Ceramic IN 4.7uF,X7R,50V C GCM Series 4 3225 Ceramic MURATA IN 1uF,X7R,50V C Ceramic GCM Series MURATA 5 3216 IN 1uF,X7R,50V 6 3216 GCM Series Ceramic MURATA C IN 22uF,X7R,16V C GCM Series MURATA 1 3225 Ceramic O 22uF,X7R,16V C 2 3225 GCM Series Ceramic MURATA O 22uF,X7R,16V 3 3225 MURATA Ceramic GCM Series C O 22uF,X7R,16V MURATA Ceramic GCM Series C 4 3225 O 22uF,X7R,16V GCM Series MURATA Ceramic 5 3225 C O 22uF,X7R,16V GCM Series MURATA Ceramic 6 3225 C O AVERAGE I = 3A MAX RB050L-40 Schottky Diode ROHM D1 PMDS AVERAGE I = 3A MAX RB050L-40 Schottky Diode ROHM D2 PMDS AVERAGE I = 1A MAX RB160M-40 Schottky Diode ROHM D3 PMDU AVERAGE I = 1A MAX D4 PMDU RB160M-40 Schottky Diode ROHM Drain Current = 9A MAX SP8K4 Transistor ROHM M1 SOP8 Drain Current = 9A MAX SP8K4 Transistor ROHM M2 SOP8 10μH Coil XAL6060 Series Coilcraft L1 6.36 x 3.56 x 6.1mm 10μH XAL6060 Series Coilcraft 6.36 x 3.56 x 6.1mm L2 Coil teristics may be influenced by the PCB layout pattern, used These setting values are the reference. As these charac ※ components, etc. Verification and confirmation with the actual application is recommended. www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 19/27 001 ・ 15 TSZ22111 ・ 10.DEC.2013 Rev.002

20 e Datasheet a s h e t t a D BD9015KV-M BD9016KV-M Input filter Figure 41. Filter circuit circuits for EMC measure to Figure 41.. For reference, lists the input filter rd type filter is 3 The π fficient to use only the decoupling capacitor. order LC filter. This is used when it is not su π The type filter can behave good performance as EM C filter by large attenuation characteristic. otection of automotive battery power supply line. TVS(Transient Voltage Suppressors) is used for primary pr The general zener diode is insufficient because it is necessa ry to tolerate the high energy of load dump condition. The TVS is in below list is recommended. The reverse pola rity diode is required for protection when the power supply, such as battery, is connected in reverse by mistake. No Part Name(series) Manufacturer L XAL Series Coilcraft CLF Series TDK C CD Series NICHICON UD Series NICHICON VISHAY TVS SM8 Series VISHAY D S3A thru S3M series Recommendation Parts Vender List Show recommendation parts vender below. URL No Type Manufacturer C Electrolytic Capacitor NICHICON www.nichicon.com www.murata.com C Ceramic Capacitor MURATA www.coilcraft.com L Coils Coilcraft www.global.tdk.com TDK L Coils www.sumida.com L Coils Sumida D Diodes VISHAY www.vishay.com www.rohm.com ROHM D Diodes/Resister www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 20/27 ・ 15 ・ TSZ22111 001 10.DEC.2013 Rev.002

21 Datasheet D t a s h e e t a BD9015KV-M BD9016KV-M Power Dissipation V QFP48C 1.2 1.10W ② W) 1 ( 0.8 0.6 0.75W ① 0.4 0.2 POWER DISSIPATION: Pd 0 100 75 125 150 50 25 0 AMBIENT TEMPERATURE: Ta( ) °C ( ) °C ①: IC Unit ②: IC mounted on ROHM standard board ( Glass epoxy board of 70mm × 70mm × 1.6mm ) Figure 42. Thermal derating characteristic www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 21/27 TSZ22111 ・ 001 ・ 15 10.DEC.2013 Rev.002

22 Datasheet a a s h e e t t D BD9015KV-M BD9016KV-M I/O equivalence circuits VCCCL1/VCCCL2 VREG5 BOOT1 /BOOT2 SYNC SEL OUTH1 /OUTH2 SW1 /SW2 VREG5 3V SS FB1 /FB2 EXTVCC VREG5 VREG5A EXTVCC EN1 /EN2 www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 22/27 ・ TSZ22111 001 ・ 15 10.DEC.2013 Rev.002

23 t Datasheet s h e e a t D a BD9015KV-M BD9016KV-M Operational Notes 1) Absolute maximum ratings ating temperature or other parameters can result in Exceeding the absolute maximum rating for supply voltage, oper also becomes impossible to determine the cause of the damage damages to or destruction of the chip. In this event it l mode is being considered with values expected to exceed (e.g. short circuit, open circuit, etc). Therefore, if any specia the absolute maximum ratings, implementing physical safety measures, such as adding fuses, should be considered. 2) GND electric potential Keep the GND pin potential at the lowe st (minimum) potential under any operating condition. Furthermore, excluding hat of GND. In case there is a pin with a voltage lower than the SW pin, the voltage of all pin should never drop below t ch as using a bypass route. GND implement countermeasures su 3) Power dissipation Should by any chance the power dissipation rating be exceed the chip may result in ed the rise in temperature of deterioration of the properties of the chip. Therefore allow for sufficient margins to ensure use within the power dissipation rating. 4) Input power supply out pattern should be as short as possible and free from Concerning the input pins VCC, VCCCL and EXTVCC, the lay electrical interferences. 5) Electrical characteristics this specification may be influenced by conditions such as temperature, supply The electrical characteristics given in voltage and external components. Transient characteristics should be sufficiently verified. 6) Thermal shutdown (TSD) heat damage to the IC. Normal operation This IC incorporates and integrated thermal shutdown circuit to prevent should be within the power dissipation rating, if however t he rating is exceeded for a continued period, the junction After the Tj falls below the d and turn all output pins OFF. temperature(Tj) will rise and the TSD circuit will be activate TSD threshold the circuits are automat ically restored to normal operation. Note that the TSD circuit operates in maximum ratings and therefore, under no a situation that exceeds the absolute circumstances, should the TSD circuit be used in a set design protecting the IC from heat or for any purpose other than damage. 7) Inter-pin shorting and mounting errors and position are correct. Incorrect mounting may result in Ensure that when mounting the IC on the PCB the direction een the output, input and GND pi damaging the IC. Also, shorts caused by dust entering betw n may result in damaging the IC. versed, possibly resulting in circuit internal damage or 8) In some applications, the VCC and pin potential might be re pacitor is charged, the VCC shorts to the GND. For the damage to the elements. For example, while the external ca F. We also recommend using reverse polarity μ VREG5 output pin use a capacitor with a capacitance with less than 100 diodes in series or a bypass diode between all pins and the VCC pin. electromagnetic fields 9) Operation in strong this may cause the IC to malfunction. of strong electromagnetic fields, as Use caution when operating in the presence is connected to a large inductive load, a counter-EMF ( electromotive force) might 10) In applications where the output pin occur at startup or shutdown. A diode should be added for protection. 11) Testing on application boards ile using the application board for testing, connecting a The IC needs to be discharged after each test process as, wh capacitor to a low-impedance pin may cause stress to the IC. As a protection from static electricity, ensure that the assembly setup is grounded and take sufficient caution with tr ansportation and storage. Also, make sure to turn off the power supply when connecting and disconnecting the inspection equipment. 12) GND wiring pattern grounding (at the set standard point) current GND are present, single-point When both a small-signal GND and a high gnal and high current patterns and to ensure that voltage is recommended. This in order to separate the small-si changes stemming from the wiring resistance and high curr ent do not cause any voltage change in the small-signal rn fluctuations in any connected external component GND. GND. Similarly, care must be taken to avoid wiring patte www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 23/27 001 TSZ22111 ・ 15 ・ 10.DEC.2013 Rev.002

24 Datasheet a s h e e t a D t BD9015KV-M BD9016KV-M 13) SS pin Note that the SS pin will go into test mode when supplied with 5V or more. ate layers between adjacent elements in order to keep them 14) This monolithic IC contains P+ isolation and P substr he N layers of other intersection of these P layers with t isolated. P-N junctions are formed at the elements, creating a parasitic diode or transistor. Relations between each potential may form as shown in the example below, where a resistor and transistor are connected to a pin: ○ Pin B: > Pin A, and with the transistor(NPN), when GND > With the resistor, when GND The P-N junction operates as a parasitic diode ○ With the transistor (NPN), when GND > Pin B: cting with the N layers of elements in proximity to the The P-N junction operates as a parasitic transistor by intera parasitic diode described above . Their operation can result in mutual interference between Parasitic diodes inevitably occur in the structure of the IC damage to or destruction of the chip. Therefore do not circuits and can cause malfunctions and, in turn, physical as applying a voltage to an input pin that is lower than employ any method in which parasitic diodes can operate such the (P substrate) GND. The structure example of the IC 15) Vo short to VCC (BD9016KV-M) age to Vo from externally, for instance Vo is shorted to When the over voltage protection is activated by supplying volt y appear in coil and L-side FET since the output capacitor is discharged by the VCC in application, the large current ma on diode should be added for protection. over voltage protection. A reverse protecti www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 24/27 ・ 15 ・ TSZ22111 001 10.DEC.2013 Rev.002

25 Datasheet t a s h e e t D a BD9015KV-M BD9016KV-M Ordering Information E B D 9 0 1 x K V - M 2 Package Packaging and forming specification r Part Numbe BD9015KV or BD9016KV E2: Embossed tape and reel KV: VQFP48C Marking Diagram VQFP48C (TOP VIEW) Part Number Marking Marking Part Number LOT Number BD9015KV-M BD9015KV BD9016KV-M BD9016KV 1PIN MARK www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 25/27 TSZ22111 ・ 15 ・ 001 10.DEC.2013 Rev.002

26 Datasheet D a s h e e t a t BD9015KV-M BD9016KV-M Physical Dimension Tape and Reel Information VQFP48C Package Name MARK 1PIN Embossed carrier tape Tape 1500pcs Quantity E2 Direction The direction is the 1pin of product is at the upper left when you hold of feed () reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel Order quantity needs to be multiple of the minimum quantity. ∗ www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 26/27 15 ・ TSZ22111 001 ・ 10.DEC.2013 Rev.002

27 t Datasheet a s h e e t a D BD9015KV-M BD9016KV-M Revision History Changes Date Revision New Release 22.Jul.2013 001 in Features, on page 1 Add “AEC-Q100 Qualified” 10.Dec.2013 002 www.rohm.co.jp TSZ02201-0T1T0PB00040-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 27/27 TSZ22111 001 ・ 15 ・ 10.DEC.2013 Rev.002

28 Notice Precaution on using ROHM Products ) 1 ote N ( , our Products such as medical equipment to use you intend If 1. in devices requiring extremely high reliability ( aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life , bodily injury , please consult with the ROHM sales or serious damage to property ( “ Specific Applications ” ) representative writing by ROHM in advance, ROHM shall not be in any way Unless otherwise agreed in in advance. responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ’ ROHM s Products for Specific Applications. ( N ote1) M edical Equipment Classifica tion of the Specific Applications JAPAN USA EU CHINA III CLASS b II CLASS CLASS III CLASS III IV III CLASS CLASS ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor 2. products can fail or malfunction at a cert ain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail - safe design against the physical injury, damage to any property, which a failure or of our Products may cause. The f ollowing are examples of safety measures: malfunction [a] Installation of protection circuits or other protective devices to improve system safety to reduce the impact of single or multiple circuit failure [b] Installation of redundant circuits 3. Our P roducts are no t designed under any special or extraordinary environments or conditions, as exemplified below . Accordingly, ROHM shall not be in any way responsible liable for any damages, expenses or losses arising from the or use of any ROHM’s P roduct s under any specia l or extraordinary environments or conditions . If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent erification and confirmation of product performance, reliability, etc, v prior to use, must be necessary : types of liquid, including water, oils, chemicals, and organic solvents of our Products in any [a] Use roducts are exposed to direct sunlight or P where the or in places outdoors of our Products Use [b] dust in places where the Cl Use of our Products P roducts are exposed to sea wind or corrosive gases, including [c] 2 , H 2 S, NH 3 , SO 2 , and NO 2 roducts are exposed to static electricity or electromagnetic waves in places where the of our Products Use P [d] [e] Use of our Products in proximity to heat - producing components, plastic cords, or other flammable items [f] roducts with resin or other coating materials P S ealing or coating our of our Products without cleaning residue of flux (even if you use no aning residue of - clean type fluxes, cle [g] Use soluble cleaning agents for cleaning flux is recommended); or Washing our Products by using - water or water soldering after residue P Use of the [h] roducts in places subject to dew condensation subject to 4 . The P roducts are not radiation - proof design . 5 . Please verify and confirm characteristics of the final or mounted products in using the Products. . In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, 6 confirmation o f performance characteristics after on - board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady - state loading condition may negatively affect product performance and reliability. mbient temperature When used in sealed area, . a epending on rate Power Dissipation d - De confirm that it is the use in 7 . the maximum junction temperature. the range that does not exceed 8 . Confirm that operation temperature is within the specified range described in the product specification. 9 defined in is . ROHM shall not be in any way responsible or liable for f ailure induced under de viant condition from what this document . Precaution for Mounting / Circuit board design 1. residue When a highly active halogenous (chlorine, bromine, etc.) flux is used, the affect product of flux may negatively performance and reliability. - In principle, the reflow soldering method must be used on a surface mount products, the flow soldering method must 2. be used on a through hole mount products. flow soldering method is preferred - mount products, f I on a surface the please consult with th in advance. e ROHM representative For details , please refer to ROHM Mounting specification A Notice - P A 3 - E Rev.00 ROHM Co., Ltd. All rights reserved. © 201 5

29 Precautions Regarding Application Examples and External Circuits please allow a sufficient margin con sidering variations of the 1. If change is made to the constant of an external circuit, P characteristics of the roducts and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contain ed in this document are presented only as guidance for Products use . Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contain ROHM shall not be in any way responsible or ed in this document. any damages, expenses or losses liable for incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This P roduct is e Please take proper oduct, which may be damaged due to e lectrostatic discharge. lectrostatic sensitive pr s Product the so that voltage exceeding manufacturing be will not rating maximum caution in your process and stor age body / equipment / solder iron, roducts. Please take special care under dry condi tion (e.g. Grounding of human P applied to isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation roducts are stored in the : places where 1. Product performance and soldered connecti ons may deteriorate if the P NO2 the P roducts are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and [a] [b] the temperature or humidity exceeds those recommended by ROHM [c] direct sunshine or condensation xposed to the Products are e [d] high Electrostatic the Products are exposed to storage time period Even under ROHM recommended storage condition, solderability of products out of recommended 2. roducts of which storage time is may be degraded. It is strongly recommended to confirm solderability before using P exceeding the recommended storage time period. 3. a symbol. Otherwise bent leads with Store / transport cartons in the correct direction, which is indicated on a carton may occur due to excessive stress applied when dropping of a carton. Use P 4. roducts of P roducts within the specified time after opening a humidity barrier bag. Baking is required before using which storage time is the . recommended storage time period exceeding L Precaut ion for P roduct abel s internal use ’ only label is for . A two - dimensional barcode printed on ROHM P roduct s ROHM D Precaution for isposition P roducts please dispose them properly using When disposing a n authorized industry waste company. Foreign xchange and E Precaution for Foreign rade act T Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Property Precaution Regarding Intellectual Rights 1. All informa tion and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third pa rty regarding such information or data. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the 2. Products with other articles such as components, circuits, systems or external equipment (including software). No license, expressly or impli 3. ed, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document. Provided, however, that ROHM the Products or will not assert to its intellectual property rig hts or other rights against you or your customers to the extent necessary manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Pr oducts may not be disassemble d, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. the Products and the related technical information contained in the use in any way whatsoever I n no event shall you 3. military purposes , including but not limited to, the development of mass for any - this document destruction Products or . weapons The proper names of companies or products described in this document are trademarks or registered trademarks of 4. panies or third parties. ROHM, its affiliated com A 3 - P A Notice - E Rev.00 ROHM Co., Ltd. All rights reserved. © 201 5

30 Datasheet Datasheet General Precaution fully read this document and fully understand its contents. 1. Before you use our Products, you are requested to care ilure, malfunction or accident arising from the use of a ny ROHM shall not be in an y way responsible or liable for fa ROHM’s Products against warning, caution or note contained in this document. of the issuing date and subj ec t to change without any prior 2. All information contained in this docume nt is current as test information with a ROHM sale s notice. Before purchasing or using ROHM’s Products, please confirm the la representative. ded on an “as is” basis and ROHM 3. The information contained in this doc ument is provi does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or third parties resulting from inaccuracy or errors of or liable for any damages, expenses or losses incurred by you or concerning such information. Notice – WE Rev.001 ROHM Co., Ltd. All rights reserved. © 201 5

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